Vishay PHT0805E4991BN

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

246 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FDP027N08B_F102

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

178 nC

Rds On - Drain-Source Resistance

2.21 mOhms

RoHS

Details

Id - Continuous Drain Current

223 A

系列

FDP027N08B

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm