参数名
参数值
参数名
参数值
包装/外壳
TO-92-3
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
625 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
75
Collector-Emitter Saturation Voltage
1 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
通孔
Gain Bandwidth Product fT
300 MHz
Manufacturer
Rectron
Brand
Rectron
DC Current Gain hFE Max
375
RoHS
Details
Collector- Emitter Voltage VCEO Max
40 V
包装
Reel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
75 V
产品类别
Bipolar Transistors - BJT