Vishay PTN2512E8871BBT5

包装/外壳

DPAK-3

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

10.9 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.6 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

13 nC

Tradename

SuperFET II

Rds On - Drain-Source Resistance

900 mOhms

RoHS

Details

Typical Turn-Off Delay Time

33.6 ns

Id - Continuous Drain Current

4.5 A

系列

FCD900N60Z

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

5.2 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品

MOSFET

产品类别

MOSFET

宽度

6.22 mm

高度

2.39 mm

长度

6.73 mm