Vishay RS02B1R000JR16

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

24 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

357 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Forward Transconductance - Min

31.4 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

114 nC

Tradename

SuperFET II

Rds On - Drain-Source Resistance

87 mOhms

RoHS

Details

Typical Turn-Off Delay Time

92 ns

Id - Continuous Drain Current

37 A

系列

FCP099N60E

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

23 ns

产品类别

MOSFET

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm