Vishay RWR89S9R09FSR50

包装/外壳

Power-56-8

Vds - Drain-Source Breakdown Voltage

30 V

Moisture Sensitive

有

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Unit Weight

0.002402 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

88 nC

Rds On - Drain-Source Resistance

1.8 mOhms

RoHS

Details

Id - Continuous Drain Current

28 A

系列

FDMS2D4N03S

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

宽度

5 mm

高度

1.1 mm

长度

6 mm