VISHAY SI2392DS-T1-GE3

Type of transistor

N-MOSFET

Polarisation

unipolar

Drain-source voltage

100V

Drain current

3.1A

Pulsed drain current

8A

Case

SOT23

Gate-source voltage

±20V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

0.1g

Certificates

RoHS compliant

Power dissipation

2.5W

Gate charge

10.4nC

On-state resistance

189mΩ