SI4963BDY-T1-GE3详情
VISHAY SI4963BDY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET x2
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-6.5A
Pulsed drain current
-40A
Case
SO8
Gate-source voltage
±12V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.1g
Certificates
RoHS compliant
Power dissipation
2W
Gate charge
21nC
On-state resistance
50mΩ
SI4963BDY-T1-GE3拓展信息
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哦! 它是空的。