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价格梯度
内地含税价
1
¥14.566975
10
¥13.742432
100
¥12.96456
500
¥12.23071
1000
¥11.538407
SIRB40DP-T1-GE3详情
VISHAY SIRB40DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET x2
Polarisation
unipolar
Drain-source voltage
40V
Drain current
40A
Pulsed drain current
100A
Case
PowerPAK® SO8
Gate-source voltage
-16...20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
29.6W
Gate charge
93nC
On-state resistance
4.2mΩ
SIRB40DP-T1-GE3拓展信息
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哦! 它是空的。