SI8802DB-T2-E1详情
VISHAY SI8802DB-T2-E1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Gross weight
0.001 g
Kind of channel
enhanced
Kind of package
reel,
Mounting
SMD
Gate-source voltage
±5V
Pulsed drain current
15A
Drain current
3.5A
Drain-source voltage
8V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
0.9W
Gate charge
6.5nC
On-state resistance
135mΩ
SI8802DB-T2-E1拓展信息
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哦! 它是空的。