Vishay SIHA20N50E-GE3

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220 Full Pack

Continuous Drain Current Id

19

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

34 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

46 nC

Rds On - Drain-Source Resistance

184 mOhms

RoHS

Details

Id - Continuous Drain Current

19 A

Package

Tape & Reel (TR);Cut Tape (CT);

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Vishay Siliconix

Power Dissipation (Max)

34W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

系列

SiHA20N50E

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

通道数量

1 Channel

功率耗散

34

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

184mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1640 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

92 nC @ 10 V

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N

场效应管特性

-

漏源电阻

160 mΩ

产品类别

MOSFET