SIHB17N80AE-GE3详情
VISHAY SIHB17N80AE-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
10A
Pulsed drain current
32A
Case1
TO263
Case
D2PAK
Certificates
RoHS compliant
Gross weight
2g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±30V
Power dissipation
179W
Gate charge
62nC
On-state resistance
0.29Ω
SIHB17N80AE-GE3拓展信息
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哦! 它是空的。