Vishay SIHB33N60E-E3

包装/外壳

TO-263-3

质量

1.437803 g

Continuous Drain Current Id

33

Manufacturer Part Number

SIHB33N60E-E3

Manufacturer

Vishay

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

28 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

278 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SIHB33N60E

Brand

Vishay / Siliconix

Qg - Gate Charge

100 nC

Rds On - Drain-Source Resistance

99 mOhms

RoHS

Details

Typical Turn-Off Delay Time

99 ns

Id - Continuous Drain Current

33 A

系列

E

包装

Bulk

子类别

MOSFETs

最大功率耗散

278 W

技术

Si

配置

Single

通道数量

1 Channel

上升时间

60 ns

漏源电压 (Vdss)

600 V

产品类别

MOSFET

连续放电电流(ID)

33 A

信道型

N

漏源电阻

98 mΩ

产品类别

MOSFET