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VISHAY SIRC06DP-T1-GE3
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SIRC06DP-T1-GE3详情
VISHAY SIRC06DP-T1-GE3重要参数规格及、参数值，及相似型号如下：
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET + Schottky
Polarisation
unipolar
Drain-source voltage
30V
Drain current
60A
Pulsed drain current
100A
Case
PowerPAK® SO8
Gate-source voltage
-16...20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
32W
Gate charge
58nC
On-state resistance
4mΩ
SIRC06DP-T1-GE3拓展信息
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哦! 它是空的。