SIS903DN-T1-GE3详情
VISHAY SIS903DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Certificates
RoHS compliant
Gross weight
1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±8V
Case
PowerPAK® 1212-8
Pulsed drain current
-40A
Drain current
-6A
Drain-source voltage
-20V
Power dissipation
14.8W
Gate charge
42nC
On-state resistance
40mΩ
SIS903DN-T1-GE3拓展信息
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哦! 它是空的。