SISS10DN-T1-GE3详情
VISHAY SISS10DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Certificates
RoHS compliant
Gross weight
1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
-16...20V
Case
PowerPAK® 1212-8
Pulsed drain current
150A
Drain current
60A
Drain-source voltage
40V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
36W
Gate charge
75nC
On-state resistance
3.6mΩ
SISS10DN-T1-GE3拓展信息
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哦! 它是空的。