Vishay SQJ184EP-T1_GE3

包装/外壳

PowerPAK® SO-8

安装类型

表面贴装

引脚数

4

供应商器件包装

PowerPAK® SO-8

材料

Steel

Angle

45 Degrees

Manufacturer Part Number

H20041

Approvals

CSA, UL

Manufacturer

Hubbell

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

234W (Tc)

厂商

Vishay Siliconix

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

118A (Tc)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Number of Elements per Chip

1

Package Type

PowerPAK 8 x 8L

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

118A

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

45 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

33 mOhms

Id - Continuous Drain Current

15 A

系列

Automotive, AEC-Q101, TrenchFET®

操作温度

-55°C ~ 175°C (TJ)

组成

Metallic

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

功率耗散

234W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.5mOhm @ 15A, 10V

输入电容(Ciss)(Max)@Vds

3478 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

69 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-

连接类型

Compression