Vishay SQJQ184E-T1_GE3

包装/外壳

PowerPAK® 8 x 8

安装类型

表面贴装

引脚数

8

供应商器件包装

PowerPAK® 8 x 8

Package

MINI002~003-2/002~003-4

Manufacturer Part Number

FRN003C1S-2U

Manufacturer

Fuji

Mounting

Panel

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

600W (Tc)

厂商

Vishay Siliconix

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

430A (Tc)

Number of Elements per Chip

1

Package Type

PowerPAK 8 x 8LR

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

430A

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

21 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

600 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

82 S

Brand

Vishay Semiconductors

Qg - Gate Charge

181 nC

Rds On - Drain-Source Resistance

1.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

65 ns

Id - Continuous Drain Current

430 A

系列

Automotive, AEC-Q101, TrenchFET®

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

功率耗散

600W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

16010 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

272 nC @ 10 V

上升时间

80 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

最高频率

400 Hz

信道型

N

场效应管特性

-

产品类别

MOSFET

知识产权评级

IP20