参数名
参数值
参数名
参数值
包装/外壳
TO-92-3 Kinked Lead
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
1 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
40
Collector- Emitter Voltage VCEO Max
80 V
RoHS
Details
DC Current Gain hFE Max
160
Maximum DC Collector Current
1 A
Brand
onsemi / Fairchild
Manufacturer
onsemi
Part # Aliases
BC63916_D27Z
Gain Bandwidth Product fT
100 MHz
Mounting Styles
通孔
Factory Pack QuantityFactory Pack Quantity
2000
Minimum Operating Temperature
- 55 C
Unit Weight
0.001940 oz
Collector-Emitter Saturation Voltage
500 mV
系列
BC63916
包装
切割胶带
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
-
连续集电极电流
1 A
产品类别
Bipolar Transistors - BJT
宽度
4.19 mm
高度
5.33 mm
长度
5.2 mm