WeEn Semiconductors BT158W-1200T

ECCN (US)

EAR99

HTS

8541.30.00.80

Maximum Rate of Rise of Off-State Voltage (V/us)

1500(Min)

Maximum Rate of Rise of On-State Current (A/us)

150

Maximum Gate Trigger Voltage (V)

1

Maximum Gate Trigger Current (mA)

70

Surge Current Rating (A)

1210

Maximum Holding Current (mA)

200

Repetitive Peak Reverse Voltage (V)

1200

Maximum Gate Peak Inverse Voltage (V)

5

Peak On-State Voltage (V)

1.65@160A

Repetitive Peak Forward Blocking Voltage (V)

1200

Rated Average On-State Current (A)

80

RMS On-State Current (A)

126

Repetitive Peak Off-State Current (mA)

3

Maximum Latching Current (mA)

300

Peak Gate Power Dissipation (W)

20

Average Gate Power Dissipation (W)

1

Circuit Fusing Consideration (A²S)

6115

Phase Control

无

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Supplier Package

TO-247

Military

无

Mounting

通孔

Package Height

21.1(Max)

Package Length

15.9(Max)

Package Width

5.2(Max)

PCB changed

3

Tab

Tab

引脚数量

3

RoHS状态

符合RoHS标准