参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.068784 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
50
Mounting Styles
通孔
Channel Mode
Enhancement
Part # Aliases
RFP50N06_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
22 mOhms
RoHS
Details
Typical Turn-Off Delay Time
37 ns
Id - Continuous Drain Current
50 A
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
131 W
Vgs th - Gate-Source Threshold Voltage
2 V
Typical Turn-On Delay Time
12 ns
Vds - Drain-Source Breakdown Voltage
60 V
包装
Tube
系列
RFP50N06
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
55 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
长度
10.67 mm
高度
16.3 mm
宽度
4.7 mm