参数名
参数值
参数名
参数值
包装/外壳
TO-92-3
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
800 mV
Pd - Power Dissipation
400 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.016000 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
通孔
Forward Transconductance - Min
0.1 S
Channel Mode
Enhancement
Part # Aliases
2N7000BU_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
-
Rds On - Drain-Source Resistance
1.2 Ohms
RoHS
Details
Typical Turn-Off Delay Time
10 ns
Id - Continuous Drain Current
200 mA
系列
2N7000
包装
Bulk
类型
MOSFET
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
10 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品
MOSFET小信号
产品类别
MOSFET
宽度
4.19 mm
高度
5.33 mm
长度
5.2 mm