参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
Emitter- Base Voltage VEBO
9 V
Pd - Power Dissipation
30 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
8
Collector-Emitter Saturation Voltage
500 mV
Unit Weight
0.063493 oz
Minimum Operating Temperature
-
Factory Pack QuantityFactory Pack Quantity
1000
Mounting Styles
通孔
Gain Bandwidth Product fT
4 MHz
Part # Aliases
KSE13003TH1ATU_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
1.5 A
DC Current Gain hFE Max
40
RoHS
Details
Collector- Emitter Voltage VCEO Max
400 V
系列
KSE13003T
包装
Tube
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
700 V
连续集电极电流
1.5 A
产品类别
Bipolar Transistors - BJT
宽度
4.7 mm
高度
9.4 mm
长度
10.1 mm