Welwyn PCF2010H-13-133RLI

包装/外壳

SOT-89-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1.2 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

30 at 50 mA, 5 V

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

250 at 10 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

160 V

包装

Reel

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

180 V

连续集电极电流

1 A

产品类别

Bipolar Transistors - BJT