参数名
参数值
参数名
参数值
包装/外壳
TDSON-8
Vds - Drain-Source Breakdown Voltage
20 V
Moisture Sensitive
有
Typical Turn-On Delay Time
15 ns
Vgs th - Gate-Source Threshold Voltage
1.2 V
Pd - Power Dissipation
2.8 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Unit Weight
0.004047 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
SP000307376 BSC19N2KSGXT BSC019N02KSGAUMA1
Manufacturer
Infineon
Brand
Infineon Technologies
Qg - Gate Charge
64 nC
Tradename
OptiMOS
Rds On - Drain-Source Resistance
1.95 mOhms
RoHS
Details
Typical Turn-Off Delay Time
95 ns
Id - Continuous Drain Current
30 A
系列
OptiMOS 2
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
187 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
5.15 mm
高度
1.27 mm
长度
5.9 mm