参数名
参数值
参数名
参数值
包装/外壳
TO-252-3
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
2500
Minimum Operating Temperature
- 55 C
Unit Weight
0.011640 oz
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
80 W
Vgs th - Gate-Source Threshold Voltage
2.5 V
Typical Turn-On Delay Time
5.5 ns
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
8 A
Typical Turn-Off Delay Time
55 ns
RoHS
Details
Rds On - Drain-Source Resistance
540 mOhms
Qg - Gate Charge
22 nC
Brand
Rectron
Manufacturer
Rectron
Part # Aliases
RM8N650LD
Channel Mode
Enhancement
Forward Transconductance - Min
5.5 S
包装
Reel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
3.5 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET