参数名
参数值
参数名
参数值
包装/外壳
SSOT-6
Vds - Drain-Source Breakdown Voltage
12 V
Typical Turn-On Delay Time
9 ns
Vgs th - Gate-Source Threshold Voltage
1.5 V
Pd - Power Dissipation
960 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.001270 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
8 S
Channel Mode
Enhancement
Part # Aliases
FDC6318P_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
8 nC
Tradename
PowerTrench
Rds On - Drain-Source Resistance
69 mOhms
RoHS
Details
Typical Turn-Off Delay Time
21 ns
Id - Continuous Drain Current
2.5 A
Case Code - in
1206
Case Code - mm
3216
系列
FDC6318P
包装
MouseReel
容差
1 %
类型
MOSFET
电阻
1.74 Ohms
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
上升时间
14 ns
产品类别
MOSFET
晶体管类型
2 P-Channel
产品
MOSFET小信号
特征
-
产品类别
MOSFET
宽度
1.6 mm
高度
1.1 mm
长度
2.9 mm