Welwyn RC65PC-200RDI

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

595 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FCH023N65S3_F155

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

222 nC

Tradename

SuperFET III

Rds On - Drain-Source Resistance

23 mOhms

RoHS

Details

Id - Continuous Drain Current

75 A

系列

FCH023N65S3

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

宽度

4.82 mm

高度

20.82 mm

长度

15.87 mm