参数名
参数值
参数名
参数值
包装/外壳
TO-263-3
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.139332 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
50
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
IXYS
Brand
IXYS
Qg - Gate Charge
105 nC
Tradename
HiPerFET
Rds On - Drain-Source Resistance
6.9 mOhms
RoHS
Details
Typical Turn-Off Delay Time
60 ns
Id - Continuous Drain Current
150 A
Pd - Power Dissipation
480 W
Vgs th - Gate-Source Threshold Voltage
4.5 V
Typical Turn-On Delay Time
23 ns
Vds - Drain-Source Breakdown Voltage
150 V
包装
Tube
系列
X4-Class
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
5 ns
产品类别
MOSFET
产品类别
MOSFET