Welwyn WCR2010-3K9FI

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

700 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

51 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4 S

Channel Mode

Enhancement

Part # Aliases

RMP4N70LD

Manufacturer

Rectron

Brand

Rectron

Qg - Gate Charge

35 nC

Rds On - Drain-Source Resistance

3.2 Ohms

RoHS

Details

Typical Turn-Off Delay Time

75 ns

Id - Continuous Drain Current

4 A

包装

Reel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

58 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET