Welwyn WHPC1218-2K94FT4

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

263 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Forward Transconductance - Min

132 S

Channel Mode

Enhancement

Part # Aliases

FDP045N10A_F102

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

57 nC

Rds On - Drain-Source Resistance

3.8 mOhms

RoHS

Details

Id - Continuous Drain Current

120 A

系列

FDP045N10A

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

26 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm