参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
Vds - Drain-Source Breakdown Voltage
650 V
Typical Turn-On Delay Time
22 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
38 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.068784 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
50
Mounting Styles
通孔
Forward Transconductance - Min
16 S
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
44 nC
Rds On - Drain-Source Resistance
105 mOhms
RoHS
Details
Typical Turn-Off Delay Time
60 ns
Id - Continuous Drain Current
24 A
系列
FCPF125N65S3
包装
Tube
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
25 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET