参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
48-TFSOP (0.724, 18.40mm Width)
表面安装
YES
供应商器件包装
48-TSOP
终端数量
48
EU RoHS
Compliant
ECCN (US)
3A991b.1.a.
HTS
8542.32.00.71
Automotive
有
PPAP
Unknown
Cell Type
SLC NAND
Chip Density (bit)
8G
Block Organization
Symmetrical
Address Bus Width (bit)
31
Number of Bits/Word (bit)
8
Number of Words
1G
Programmability
有
Timing Type
Asynchronous
Maximum Erase Time (S)
0.01/Block
Maximum Programming Time (ms)
0.7/Page
Interface Type
Parallel
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3|3.3
Maximum Operating Supply Voltage (V)
3.6
Programming Voltage (V)
2.7 to 3.6
Operating Current (mA)
35
Program Current (mA)
35
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Command Compatible
无
ECC Support
有
Support of Page Mode
有
Minimum Endurance (Cycles)
100000
Mounting
表面贴装
Package Height
1
Package Width
18.4
Package Length
12
PCB changed
48
Standard Package Name
SOP
Supplier Package
TSOP-I
Lead Shape
Gull-wing
Package
Tray
厂商
Winbond Electronics
Product Status
活跃
Memory Types
Non-Volatile
Supply Voltage-Nom (Vsup)
2.7V - 3.6V
Dimensions
18.5 x 12.1 x 1.05mm
Minimum Operating Supply Voltage
2.7 V
Package Type
TSOP
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Maximum Operating Supply Voltage
3.6 V
Package Description
TSOP1,
Package Style
SMALL OUTLINE, THIN PROFILE
Number of Words Code
1000000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
W29N08GVSIAA
Package Code
TSOP1
Package Shape
RECTANGULAR
Manufacturer
Winbond Electronics Corp
Part Life Cycle Code
活跃
Ihs Manufacturer
WINBOND ELECTRONICS CORP
Risk Rank
2.28
操作温度
-40°C ~ 85°C (TA)
系列
-
零件状态
活跃
类型
SLC NAND Flash
技术
FLASH - NAND (SLC)
电压 - 供电
2.7V ~ 3.6V
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
引脚数量
48
JESD-30代码
R-PDSO-G48
电源电压-最大值(Vsup)
3.6 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
2.7 V
内存大小
8Gbit
速度
40MHz
操作模式
ASYNCHRONOUS
访问时间
25 ns
内存格式
FLASH
内存接口
Parallel
建筑学
Sectored
组织结构
High Quality Single Level Cell (SLC) Technology Standard ONFI NAND Command Set
座位高度-最大
1.2 mm
内存宽度
8
写入周期时间 - 字符、页面
25ns, 700µs
记忆密度
8Gb
并行/串行
PARALLEL
内存IC类型
FLASH
编程电压
3 V
行业规模
128Kbyte x 8192
页面尺寸
2Kbyte
引导模块
无
温度
40ºC ~ 85ºC / -40ºC ~ 105ºC
组织的记忆
1G x 8
宽度
18.5mm
高度
1.05mm
长度
12.1mm