Wuxi China Resources Huajing Microelectronics CS55N06A4
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CS55N06A4
1604-CS55N06A4
晶体管 - FET,MOSFET - 单个
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60V 55A 69.5W 13mΩ@10V,20A 1.9V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
1最小包装量--
CS55N06A4详情
Wuxi China Resources Huajing Microelectronics CS55N06A4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Power Dissipation (Pd)
69.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)
13mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)
1.9V@250uA
Package
Tape & Reel (TR)
类型
1 N-Channel
Continuous Drain Current (Id)
55A
CS55N06A4拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。