Wuxi NCE Power Semiconductor NCEP0135A

RoHS

true

Drain Source Voltage (Vdss)

100V

Drain Source On Resistance (RDS(on)@Vgs,Id)

18mΩ@10V,20A

Power Dissipation (Pd)

110W

Gate Threshold Voltage (Vgs(th)@Id)

2V@250uA

Reverse Transfer Capacitance (Crss@Vds)

11pF@50V

Input Capacitance (Ciss@Vds)

1.6nF@50V

Total Gate Charge (Qg@Vgs)

26nC@10V

Package

Tube-packed

操作温度

-55℃~+175℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

35A