Wuxi NCE Power Semiconductor NCEP85T12D

RoHS

true

Drain Source Voltage (Vdss)

85V

Drain Source On Resistance (RDS(on)@Vgs,Id)

5.5mΩ@10V,60A

Power Dissipation (Pd)

160W

Gate Threshold Voltage (Vgs(th)@Id)

3.3V@250uA

Reverse Transfer Capacitance (Crss@Vds)

57pF@40V

Input Capacitance (Ciss@Vds)

4.3nF@40V

Total Gate Charge (Qg@Vgs)

55nC@10V

Package

Tape & Reel (TR)

操作温度

-55℃~+175℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

120A