参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
供应商器件包装
0201
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
200 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
100 mS
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
800 pC
Rds On - Drain-Source Resistance
4 Ohms
RoHS
Details
Typical Turn-Off Delay Time
40 ns
Id - Continuous Drain Current
115 mA
Package
Tape & Reel (TR)
厂商
YAGEO
Product Status
活跃
包装
Reel
操作温度
-55°C ~ 125°C
系列
RT
尺寸/尺寸
0.024 L x 0.012 W (0.60mm x 0.30mm)
容差
±1%
终止次数
2
温度系数
±25ppm/°C
电阻
1 kOhms
组成
Thin Film
功率(瓦特)
0.05W, 1/20W
子类别
MOSFETs
技术
Si
失败率
-
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 N-Channel
特征
Moisture Resistant
产品类别
MOSFET
座位高度(最大)
0.010 (0.26mm)
评级结果
-