2688 In Stock

-

表面贴装

67-VFBGA

YES

Non-Volatile

-40°C~85°C TA

Tray

Benand™

活跃

3 (168 Hours)

67

2.7V~3.6V

BOTTOM

1

3.3V

0.8mm

R-PBGA-B67

3.6V

2.7V

2Gb 256M x 8

ASYNCHRONOUS

FLASH

Parallel

256MX8

8

25ns

2147483648 bit

3.3V

1mm

8mm

6.5mm

符合RoHS标准

3000 In Stock

-

CONSULT SALES OFFICE (Last Updated: 1 week ago)

Gold

表面贴装

表面贴装

8-WFDFN Exposed Pad

8

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2008

e4

yes

Obsolete

1 (Unlimited)

8

EAR99

1.8V~5.5V

DUAL

1

3V

CAT93C46

8

5V

Serial

1Kb 128 x 8 64 x 16

1mA

4MHz

250 ns

EEPROM

SPI

64X16

无卤素

1 kb

0.00001A

MICROWIRE

1000000 Write/Erase Cycles

100

SOFTWARE

750μm

2.1mm

3.1mm

无

ROHS3 Compliant

无铅

10000 In Stock

-

6 Weeks

表面贴装

表面贴装

8-WFDFN Exposed Pad

8

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2009

e4

yes

活跃

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

2.5V~5.5V

DUAL

260

1

5V

0.5mm

40

25LC080C

8

5V

SPI, Serial

8Kb 1K x 8

5mA

10MHz

100 ns

EEPROM

SPI

8

5ms

8 kb

0.000001A

SPI

1000000 Write/Erase Cycles

5ms

200

HARDWARE/SOFTWARE

3mm

2mm

无

ROHS3 Compliant

7300 In Stock

-

表面贴装

8-WDFN Exposed Pad

8-WSON (6x8)

Non-Volatile

-40°C~85°C TA

Tray

最后一次购买

3 (168 Hours)

2.7V~3.6V

1Gb 128M x 8

104MHz

155μs

FLASH

SPI - Quad I/O

符合RoHS标准

260 In Stock

-

6 Weeks

Gold, Tin

表面贴装

表面贴装

44-TSOP (0.400, 10.16mm Width)

44

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2011

e4

活跃

3 (168 Hours)

44

3A991.B.2.A

Nickel/Palladium/Gold (Ni/Pd/Au)

8542.32.00.41

2.7V~3.6V

DUAL

260

1

3V

0.8mm

30

CY14B104

44

不合格

3V

3.6V

2.7V

4Mb 256K x 16

70mA

ASYNCHRONOUS

NVSRAM

Parallel

16b

256KX16

16

25ns

4 Mb

0.005A

25 ns

16b

1.194mm

18.415mm

ROHS3 Compliant

无铅

7809 In Stock

-

6 Weeks

Tin

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

8-SOIC

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2007

活跃

1 (Unlimited)

85°C

-40°C

1.8V~5.5V

10MHz

25AA080B

SPI, Serial

5.5V

1.8V

8Kb 1K x 8

6mA

10MHz

160 ns

EEPROM

SPI

5ms

8 kb

10MHz

无

ROHS3 Compliant

无铅

53 In Stock

-

表面贴装

165-LBGA

YES

165

Volatile

0°C~70°C TA

Tray

2004

Obsolete

3 (168 Hours)

165

流水线结构

8542.32.00.41

3.135V~3.6V

BOTTOM

1

3.3V

1mm

unknown

CY7C1380

3.6V

3.135V

18Mb 512K x 36

167MHz

3.4ns

SRAM

Parallel

512KX36

36

18874368 bit

1.4mm

15mm

13mm

Non-RoHS Compliant

4868 In Stock

-

13 Weeks

表面贴装

16-SOIC (0.295, 7.50mm Width)

YES

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2016

Automotive, AEC-Q100, FL-P

活跃

3 (168 Hours)

16

8542.32.00.51

2.7V~3.6V

DUAL

未说明

1

3V

1.27mm

未说明

R-PDSO-G16

3.6V

2.7V

64Mb 8M x 8

SYNCHRONOUS

104MHz

FLASH

SPI - Quad I/O

64MX1

1

5μs, 3ms

67108864 bit

SERIAL

3V

2.65mm

10.3mm

7.5mm

ROHS3 Compliant

N/A

-

8 Weeks

表面贴装

表面贴装

44-TSOP (0.400, 10.16mm Width)

44

Volatile

Industrial grade

-40°C~85°C TA

Tape & Reel (TR)

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn)

3.135V~3.6V

DUAL

260

1

3.3V

0.8mm

40

44

3.3V

3.63V

4Mb 256K x 16

1

110mA

SRAM

Parallel

3-STATE

16

10ns

18b

4 Mb

COMMON

Asynchronous

16b

2V

无

ROHS3 Compliant

23760 In Stock

-

10 Weeks

表面贴装

8-UFDFN Exposed Pad

YES

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2017

MXSMIO™

yes

活跃

3 (168 Hours)

8

ALSO IT CAN BE CONFIGURED AS 8M X 1 BIT

2.3V~3.6V

DUAL

未说明

1

3V

0.5mm

未说明

R-PDSO-N8

3.6V

2.3V

SPI, Serial

8Mb 1M x 8

SYNCHRONOUS

104MHz

FLASH

SPI

2MX4

4

100μs, 4ms

8388608 bit

3V

2

0.6mm

3mm

2mm

ROHS3 Compliant

1638 In Stock

-

13 Weeks

Tin

表面贴装

表面贴装

16-SOIC (0.295, 7.50mm Width)

16

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2007

FL-S

e3

活跃

3 (168 Hours)

16

3A991.B.1.A

8542.32.00.51

2.7V~3.6V

DUAL

260

1

3V

1.27mm

30

不合格

3V

3.6V

2.7V

Parallel, SPI, Serial

512Mb 64M x 8

75mA

133MHz

8 ns

FLASH

SPI - Quad I/O

64MX8

8

32b

512 Mb

0.0001A

Asynchronous

3V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

1

512B

2.65mm

10.3mm

ROHS3 Compliant

2517 In Stock

-

表面贴装

表面贴装

256-LBGA

256

Volatile

0°C~70°C TA

Tray

2005

e1

Obsolete

5 (48 Hours)

256

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

1.42V~1.58V 1.7V~1.9V

BOTTOM

260

1

1.5V

1mm

unknown

20

CYD09S18

256

不合格

1.8V

1.58V

9Mb 512K x 18

2

580mA

167MHz

4ns

SRAM

Parallel

3-STATE

18

19b

9 Mb

COMMON

Synchronous

18b

1.4V

1.7mm

17mm

ROHS3 Compliant

无铅

N/A

-

12 Weeks

BGA-165

YES

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672D18BE-333I

333 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.43

BGA

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

Tray

GS8672D18BE

3A991.B.2.B

SigmaQuad-II

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

SYNCHRONOUS

1.21 A

4 M x 18

3-STATE

1.5 mm

18

SRAM

72

PARALLEL

SEPARATE

标准SRAM

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-119

有

150 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS882Z18CGB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

120 mA, 130 mA

7.5 ns

512 k x 18

SRAM

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS88018CGT-150I

150 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

QFP

有

150 MHz

+ 85 C

3.6 V

Tray

GS88018CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA, 150 mA

7.5 ns

512 k x 18

3-STATE

1.6 mm

18

SRAM

0.045 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

SRAM

20 mm

14 mm

N/A

-

TQFP-100

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS880E32CGT

DCD

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-119

150 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

有

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

190 mA, 200 mA

7.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Tray

GS816136DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

180 mA, 190 mA

7.5 ns

512 k x 36

SRAM

SRAM

N/A

-

N/A

-

7 Weeks

BGA-119

YES

119

83.3@Flow-Through/100@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

100 MHz

+ 85 C

3.6 V

- 40 C

84

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

128000

BGA

5.35

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

2.5 V

100 MHz

GS842Z36CGB-100I

有

85 °C

12 ns

未说明

-40 °C

BGA119,7X17,50

PLASTIC/EPOXY

Industrial grade

-40 to 100 °C

Tray

GS842Z36CGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

4 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

12 ns

Flow-Through/Pipelined

128 k x 36

3-STATE

1.99 mm

36

17 Bit

SRAM

4 Mbit

0.045 A

4718592 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

N/A

-

7 Weeks

BGA-119

YES

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

256000

PLASTIC/EPOXY

BGA119,7X17,50

12 ns

70 °C

无

GS842Z18CB-100I

100 MHz

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

有

100 MHz

+ 85 C

3.6 V

- 40 C

84

2.3 V

SMD/SMT

Tray

GS842Z18CB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

4 Mbit

SYNCHRONOUS

130 mA

12 ns

256 k x 18

3-STATE

1.99 mm

18

SRAM

0.045 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

有

Tray

GS8672D18BE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.38 A

4 M x 18

SRAM

72

SRAM

4850 In Stock

-

5 Weeks

Tin

表面贴装

表面贴装

8-SOIC (0.209, 5.30mm Width)

8

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2011

e3

活跃

1 (Unlimited)

8

EAR99

200 YEARS DATA RETENTION

1.7V~5.5V

DUAL

260

1

5V

1.27mm

40

24AA1026

8

5.5V

1.7V

I2C, Serial

1Mb 128K x 8

5mA

400kHz

900ns

EEPROM

I2C

8

5ms

1 Mb

0.000005A

I2C

1000000 Write/Erase Cycles

5ms

200

HARDWARE

1010DDMR

2.03mm

5.26mm

5.25mm

无

ROHS3 Compliant

490 In Stock

-

12 Weeks

表面贴装

8-WDFN Exposed Pad

YES

8

Non-Volatile

-40°C~85°C TA

Tube

1998

SST25

e3

活跃

1 (Unlimited)

8

Matte Tin (Sn) - annealed

2.7V~3.6V

DUAL

1

1.27mm

SST25VF040B

3.3V

3.6V

2.7V

SPI, Serial

4Mb 512K x 8

50MHz

FLASH

SPI

4MX1

1

10μs

4 Mb

2.7V

6mm

5mm

无

ROHS3 Compliant

6000 In Stock

-

8 Weeks

表面贴装

表面贴装

54-TSOP (0.400, 10.16mm Width)

54

Non-Volatile

-40°C~85°C TA

Tray

2015

e3

活跃

3 (168 Hours)

54

EAR99

Tin (Sn)

3V~3.6V

DUAL

260

1

3.3V

0.8mm

54

3.3V

3.6V

3V

16Mb 1M x 16

110mA

180mA

RAM

Parallel

16b

1MX16

16

35ns

16 Mb

0.014A

35 ns

16b

1.2mm

22.22mm

无

ROHS3 Compliant

无铅