GSI Technology GS842Z36CGB-100I

工厂交货时间

7 Weeks

包装/外壳

BGA-119

表面安装

YES

终端数量

119

Maximum Clock Rate

83.3@Flow-Through/100@Pipelined MHz

Supplier Package

FBGA

Data Rate Architecture

SDR

Typical Operating Supply Voltage

2.5, 3.3 V

Minimum Operating Supply Voltage

2.3, 3 V

Timing Type

Synchronous

Number of Words

128 kWords

Number of I/O Lines

36 Bit

Maximum Operating Supply Voltage

2.7, 3.6 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

100 MHz

Maximum Operating Temperature

+ 85 C

Supply Voltage-Max

3.6 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

84

Supply Voltage-Min

2.3 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

NBT SRAM

RoHS

Details

Memory Types

SDR

Package Description

BGA, BGA119,7X17,50

Package Style

网格排列

Number of Words Code

128000

Part Package Code

BGA

Risk Rank

5.35

Ihs Manufacturer

GSI TECHNOLOGY

Part Life Cycle Code

活跃

Package Shape

RECTANGULAR

Package Code

BGA

Supply Voltage-Nom (Vsup)

2.5 V

Clock Frequency-Max (fCLK)

100 MHz

Manufacturer Part Number

GS842Z36CGB-100I

Rohs Code

有

Operating Temperature-Max

85 °C

Access Time-Max

12 ns

Reflow Temperature-Max (s)

未说明

Operating Temperature-Min

-40 °C

Package Equivalence Code

BGA119,7X17,50

Package Body Material

PLASTIC/EPOXY

Usage Level

Industrial grade

操作温度

-40 to 100 °C

系列

GS842Z36CGB

包装

Tray

ECCN 代码

3A991.B.2.B

类型

NBT Pipeline/Flow Through

附加功能

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

HTS代码

8542.32.00.41

子类别

Memory & Data Storage

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

峰值回流焊温度（摄氏度）

未说明

功能数量

1

端子间距

1.27 mm

Reach合规守则

compliant

引脚数量

119

JESD-30代码

R-PBGA-B119

资历状况

不合格

电源电压-最大值(Vsup)

2.7 V

电源

2.5/3.3 V

温度等级

INDUSTRIAL

电源电压-最小值(Vsup)

2.3 V

内存大小

4 Mbit

端口的数量

4

操作模式

SYNCHRONOUS

电源电流-最大值

130 mA, 140 mA

访问时间

12 ns

建筑学

Flow-Through/Pipelined

组织结构

128 k x 36

输出特性

3-STATE

座位高度-最大

1.99 mm

内存宽度

36

地址总线宽度

17 Bit

产品类别

SRAM

密度

4 Mbit

待机电流-最大值

0.045 A

记忆密度

4718592 bit

筛选水平

Industrial

并行/串行

PARALLEL

I/O类型

COMMON

内存IC类型

ZBT SRAM

待机电压-最小值

2.3 V

产品类别

SRAM

宽度

14 mm

长度

22 mm