类别是'category.专用模块' (1062)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 端口的数量 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 输出启用 | 混合内存类型 | 长度 | 宽度 | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | SN74LS219AN | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | 16 words | 16 | 70 °C | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | 活跃 | ROCHESTER ELECTRONICS LLC | , | 80 ns | EAR99 | LG_MAX | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T16 | 5.25 V | 4.75 V | 1 | ASYNCHRONOUS | 0.06 mA | 16X4 | 3-STATE | 5.08 mm | 4 | 64 bit | PARALLEL | SEPARATE | 标准SRAM | 4.75 V | NO | 19.8 mm | 7.62 mm | ||||||||||||||||
![]() | M36L0R8060T1ZAQE | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 88 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Transferred | NUMONYX | BGA | TFBGA, | e1 | EAR99 | 锡银铜 | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 未说明 | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 存储器电路 | 10 mm | 8 mm | ||||||||||||||||
![]() | M36L0R8060T1ZAQE | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 88 | STMICROELECTRONICS | BGA | 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 有 | Transferred | e1 | EAR99 | 锡银铜 | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.052 mA | 16MX16 | 1.2 mm | 16 | 0.00011 A | 268435456 bit | 存储器电路 | FLASH+PSRAM | 10 mm | 8 mm | |||||||||||||
![]() | M5M4C500AVP-5 | Mitsubishi Electric | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | PLASTIC/EPOXY | 70 °C | 40 ns | TSSOP, TSSOP28,.53,22 | MITSUBISHI ELECTRIC CORP | Obsolete | 无 | 5 V | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | RECTANGULAR | TSSOP28,.53,22 | TSSOP | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | 鸥翼 | 0.55 mm | unknown | R-PDSO-G28 | 不合格 | COMMERCIAL | 0.05 mA | 0.004 A | ||||||||||||||||||||||||||||||
![]() | M36L0R8060T1ZAQE | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 88 | Obsolete | 有 | 1.8 V | GRID ARRAY, THIN PROFILE, FINE PITCH | RECTANGULAR | TFBGA | PLASTIC/EPOXY | -25 °C | 85 °C | 16000000 | 16777216 words | TFBGA, | BGA | MICRON TECHNOLOGY INC | e1 | 有 | EAR99 | 锡银铜 | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 存储器电路 | 10 mm | 8 mm | ||||||||||||||||
![]() | SST32HF324C-70-4C-LBKE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | 有 | Obsolete | SILICON STORAGE TECHNOLOGY INC | BGA | LBGA, | e1 | 有 | EAR99 | 锡银铜 | STATIC RAM IS ORGANIZED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 48 | R-PBGA-B48 | 不合格 | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 2MX16 | 1.4 mm | 16 | 33554432 bit | 存储器电路 | 12 mm | 10 mm | |||||||||||||||||
![]() | S72NS512PD0AHGL43 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 有 | Obsolete | SPANSION INC | , | EAR99 | 8542.32.00.71 | 260 | unknown | 40 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PF38F5060M0Y0B0 | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 105 | Obsolete | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA105,9X12,32 | 96 ns | 33554432 words | 32000000 | 85 °C | -30 °C | PLASTIC/EPOXY | TFBGA | BGA105,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 有 | 有 | EAR99 | PSEUDO SRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 30 | 105 | R-PBGA-B105 | 不合格 | 2 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.2 mm | 16 | 0.00016 A | 536870912 bit | 存储器电路 | FLASH+PSRAM | 11 mm | 9 mm | ||||||||||||
![]() | PF38F5060M0Y0B0 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 105 | 有 | Transferred | NUMONYX | BGA | TFBGA, BGA105,9X12,32 | 96 ns | 3 | 33554432 words | 32000000 | 85 °C | -30 °C | PLASTIC/EPOXY | TFBGA | BGA105,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | e1 | EAR99 | 锡银铜 | PSEUDO SRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 105 | R-PBGA-B105 | 不合格 | 2 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.2 mm | 16 | 0.00016 A | 536870912 bit | 存储器电路 | FLASH+PSRAM | 11 mm | 9 mm | ||||||||||||
![]() | UPD27C1000D-20 | Renesas Electronics Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | , | Obsolete | RENESAS ELECTRONICS CORP | EAR99 | 8542.32.00.71 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S71VS256RD0ZHE400 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | BGA | TFBGA, | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 有 | Obsolete | SPANSION INC | EAR99 | PSRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 56 | R-PBGA-B56 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 存储器电路 | 9.2 mm | 8 mm | |||||||||||||||||
![]() | S71VS256RD0ZHEC00 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | BGA | 9.20 X 8 MM, 0.50 MM PITCH, LEAD FREE, VFBGA-56 | 16 words | 16 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 有 | Obsolete | SPANSION INC | EAR99 | PSRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | compliant | 40 | 56 | R-PBGA-B56 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 16X16 | 1.2 mm | 16 | 256 bit | 存储器电路 | 9.2 mm | 8 mm | |||||||||||||||||
![]() | S71JL064H80BAW110 | AMD | 数据表 | 129 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 73 | Transferred | ADVANCED MICRO DEVICES INC | BGA | 11.60 X 8 MM, FBGA-73 | 70 ns | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 有 | EAR99 | PSRAM IS ORGANIZED AS 512K X 16; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | 8542.32.00.71 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | 未说明 | 73 | R-PBGA-B73 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.045 mA | 4MX16 | 1.4 mm | 16 | 67108864 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | |||||||||||||
![]() | S71JL064H80BAW110 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 73 | SPANSION INC | BGA | LFBGA, | 3 | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 无 | Obsolete | e0 | EAR99 | 锡铅 | PSEUDO STATIC RAM IS ORGANIZED AS 512K X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 73 | R-PBGA-B73 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.4 mm | 16 | 67108864 bit | 存储器电路 | 11.6 mm | 8 mm | ||||||||||||||||
![]() | S71NS032JA0BJWRT0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TMS4C1060-40N | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | 70 °C | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | TEXAS INSTRUMENTS INC | DIP, DIP16,.3 | 30 ns | EAR99 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 未说明 | 2.54 mm | not_compliant | 未说明 | R-PDIP-T16 | 不合格 | COMMERCIAL | 0.045 mA | 0.01 A | 存储器电路 | |||||||||||||||||||||||||||||
![]() | M4-4111-Z3 | Moujen Switch | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S71PL129NB0HFW4B0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | 有 | Obsolete | SPANSION INC | BGA | 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-64 | 70 ns | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | e1 | EAR99 | 锡银铜 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | 不合格 | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | ||||||||||||
![]() | TH50VSF3581AASB | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 69 | BGA | LFBGA, BGA69,10X12,32 | 90 ns | 2097152 words | 2000000 | 85 °C | -30 °C | PLASTIC/EPOXY | LFBGA | BGA69,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | Transferred | TOSHIBA CORP | e0 | EAR99 | 锡铅 | USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 69 | R-PBGA-B69 | 不合格 | 3.3 V | OTHER | 2.67 V | ASYNCHRONOUS | 0.05 mA | 2MX16 | 1.4 mm | 16 | 33554432 bit | 存储器电路 | FLASH+SRAM | 12 mm | 9 mm | ||||||||||||||
![]() | XC17S30VOG8C | AMD Xilinx | 数据表 | 702 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | TSOP | TSOP2, | 3 | 247968 words | 247968 | 70 °C | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 有 | Obsolete | XILINX INC | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 30 | 8 | R-PDSO-G8 | 不合格 | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | 247968X1 | 1.2 mm | 1 | 247968 bit | 存储器电路 | 4.9 mm | 3.9 mm | |||||||||||||||
![]() | XC17S100XLSOG20I | AMD Xilinx | 数据表 | 564 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 20 | XILINX INC | SOIC | SOP, | 3 | 781248 words | 781248 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 3.3 V | 有 | Obsolete | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 30 | 20 | R-PDSO-G20 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 781248X1 | 2.65 mm | 1 | 781248 bit | 存储器电路 | 12.8 mm | 7.5 mm | ||||||||||||||
![]() | DS1235YW | Dallas Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DALLAS SEMICONDUCTOR | Obsolete | EAR99 | 8542.32.00.71 | unknown | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S63256 | Asahi Kasei Microsystems Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | , | 活跃 | ASAHI KASEI MICRODEVICES CORP | EAR99 | 8542.32.00.71 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HYG0UEG0AF1P-6SS0E | SK Hynix Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 149 | 85 °C | -30 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 活跃 | SK HYNIX INC | FBGA-149 | 33554432 words | 32000000 | EAR99 | IT ALSO CONTAINS 512MBIT(64MBIT X 8) MOBILE DDR SDRAM OPERATES AT 2.7V NOM SUPPLY | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B149 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.4 mm | 16 | 536870912 bit | 存储器电路 | 14 mm | 10 mm | |||||||||||||||||||||||
![]() | S71VS256RD0AHKBL0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | -25 °C | PLASTIC/EPOXY | FBGA | BGA56,10X14,20 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 有 | Transferred | SPANSION INC | FBGA, BGA56,10X14,20 | 85 °C | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 260 | 0.5 mm | unknown | 40 | R-PBGA-B56 | 不合格 | OTHER | 存储器电路 | FLASH+PSRAM |
SN74LS219AN
Rochester Electronics LLC
分类:Specialized
M36L0R8060T1ZAQE
Numonyx Memory Solutions
分类:Specialized
M36L0R8060T1ZAQE
STMicroelectronics
分类:Specialized
M5M4C500AVP-5
Mitsubishi Electric
分类:Specialized
M36L0R8060T1ZAQE
Micron Technology Inc
分类:Specialized
SST32HF324C-70-4C-LBKE
Silicon Storage Technology
分类:Specialized
S72NS512PD0AHGL43
Spansion
分类:Specialized
PF38F5060M0Y0B0
Micron Technology Inc
分类:Specialized
PF38F5060M0Y0B0
Numonyx Memory Solutions
分类:Specialized
UPD27C1000D-20
Renesas Electronics Corporation
分类:Specialized
S71VS256RD0ZHE400
Spansion
分类:Specialized
S71VS256RD0ZHEC00
Spansion
分类:Specialized
S71JL064H80BAW110
AMD
分类:Specialized
S71JL064H80BAW110
Spansion
分类:Specialized
S71NS032JA0BJWRT0
Spansion
分类:Specialized
TMS4C1060-40N
Texas Instruments
分类:Specialized
M4-4111-Z3
Moujen Switch
分类:Specialized
S71PL129NB0HFW4B0
Spansion
分类:Specialized
TH50VSF3581AASB
Toshiba America Electronic Components
分类:Specialized
XC17S30VOG8C
AMD Xilinx
分类:Specialized
XC17S100XLSOG20I
AMD Xilinx
分类:Specialized
DS1235YW
Dallas Semiconductor
分类:Specialized
S63256
Asahi Kasei Microsystems Corporation
分类:Specialized
HYG0UEG0AF1P-6SS0E
SK Hynix Inc
分类:Specialized
S71VS256RD0AHKBL0
Spansion
分类:Specialized
