类别是'category.IGBT晶体管模块' (5134)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 安装类型 | 包装/外壳 | 供应商器件包装 | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | 厂商 | 操作温度 | 包装 | 系列 | 类型 | 子类别 | 技术 | 电压-隔离度 | 配置 | 电压 | 电流 | 功率耗散 | 输出电流 | 功率 - 最大 | 输入 | 产品类别 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 信道型 | 不同 Vge、Ic 时 Vce(on)(最大值) | 连续集电极电流 | IGBT类型 | NTC热敏电阻 | 输入电容(Cies)@Vce | 产品 | Vf-正向电压 | 产品类别 | ||||||||||||||||||||||||
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FF900R17ME7B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | - | 1.7V | 900 A | - 40 C | 10 | FF900R17ME7_B11 SP005423488 | Infineon | Infineon Technologies | Infineon Technologies | Details | 1700 V | Tray | 活跃 | 900 A | FF900R17 | ±20V | 1700 V | - | + 175 C | -40°C ~ 175°C (TJ) | Tray | IGBTs | 2 Independent | 20mW | 20 mW | Standard | IGBT模块 | 5 mA | 1700 V | 1.85V @ 15V, 900A | 900A | 沟渠现场停车 | 有 | 93.8 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||
FS200R10W3S7B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Infineon Technologies | Tray | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12N2T7BPSA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2 | 1.55 V | 150 A | Infineon Technologies | Details | Infineon Technologies | 1200 V | Tray | 活跃 | 150 A | FS150R12 | - | + 175 C | - 40 C | 15 | FS150R12N2T7 SP005422562 | Infineon | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | Standard | IGBT模块 | 1.2 μA | 1200 V | 1.8V @ 15V, 150A | 沟渠现场停车 | 有 | 30.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||||||
FS3L25R12W2H3PB11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 活跃 | Infineon Technologies | 18 | FS3L25R12W2H3P_B11 SP001691300 | Infineon | Infineon Technologies | Details | Tray | Tray | * | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||||||
IXYN110N120C4 | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | 2.4 V | 220 A | 螺钉安装 | IXYS | IXYS | 220 A | IXYS | XPT | Details | 1.2 kV | Tube | 活跃 | 220 A | - 20 V, + 20 V | 830 W | + 175 C | - 55 C | 10 | -55°C ~ 175°C (TJ) | Tube | IGBTs | Si | Single | 830 W | Standard | IGBT晶体管 | 50 μA | 1200 V | 2.4V @ 15V, 110A | - | 无 | 5.42 nF @ 25 V | IGBT晶体管 | ||||||||||||||||||||||||
FS13MR12W2M1HB70BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | - | - | - | Infineon Technologies | 活跃 | 15 | FS13MR12W2M1H_B70 SP005561073 | Infineon | Infineon Technologies | Tape & Reel (TR) | - | Tray | IGBTs | 三相逆变器 | Standard | IGBT模块 | 1200 V | - | - | 无 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||
F3L75R12W1H3BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 活跃 | Infineon Technologies | 24 | F3L75R12W1H3 SP005728116 | Infineon | Infineon Technologies | Details | Tray | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||||||
NXH100B120H3Q0PG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 22-PIM (55x32.5) | 1.77V | onsemi | ±20V | Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | 1200 V | 24 | onsemi | onsemi | Tray | 活跃 | 61 A | -40°C ~ 150°C (TJ) | Tray | - | Discrete Semiconductor Modules | 2 Independent | 186W | 186 W | Standard | Discrete Semiconductor Modules | 200 μA | 1200 V | 2.3V @ 15V, 50A | 61A | 沟渠现场停车 | 无 | 9.075 nF @ 20 V | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||
NXH40B120MNQ1SNG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 32-PIM (71x37.4) | 活跃 | onsemi | Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free) | 44A | 156 W | + 150 C | - 40 C | 21 | onsemi | onsemi | Tray | -40°C ~ 175°C (TJ) | - | Discrete Semiconductor Modules | Triple, Dual - Common Source | 156W | 156 W | Standard | Discrete Semiconductor Modules | Three N Channel | - | - | 有 | 3.227 nF @ 800 V | IGBT碳化硅模块 | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||||
FP50R12N2T7BPSA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.5V | 50 A | Infineon Technologies | Details | Infineon Technologies | 1200 V | FP50R12 | 50 A | 活跃 | Tray | - | + 175 C | - 40 C | 15 | FP50R12N2T7 SP005596507 | Infineon | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | - | 20 mW | 三相桥式整流器 | IGBT模块 | 10 μA | 1200 V | 1.5V @ 15V, 50A | 50A | 沟渠现场停车 | 有 | 11.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||||
FP75R12N2T7B11BPSA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.55 V | 75 A | Infineon Technologies | Details | Infineon Technologies | 1200 V | FP75R12 | Tray | 活跃 | 75 A | - | + 175 C | - 40 C | 15 | FP75R12N2T7_B11 SP005597717 | Infineon | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 14 μA | 1200 V | 1.55V @ 15V, 75A | 沟渠现场停车 | 有 | 15.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||||||
FP35R12N2T7BPSA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.6 V | 35 A | Infineon Technologies | Details | Infineon Technologies | 1200 V | Tray | 活跃 | 35 A | FP35R12 | - | + 175 C | - 40 C | 15 | FP35R12N2T7 SP005597311 | Infineon | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 7 μA | 1200 V | 1.6V @ 15V, 35A | 沟渠现场停车 | 有 | 6.62 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||||||
NFAQ0560R46T | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP-6 | 2 V | 5 A | 1 mA | 2.6 V | onsemi | Details | 600 V | - | - 40 C | + 125 C | 400 | Tube | NFAQ0560 | 活跃 | 600V | NFAQ | Tube | NFAQ0560R46T | IGBT | 2000Vrms | 3-Phase Inverter | 600 V | 5 A | IGBT硅模块 | ||||||||||||||||||||||||||||||||||
APTGT100TDU60PG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SP6-P | SP6-P | 1.5 V | 150 A | 400 nA | APTGT100 | 微芯片技术 | 活跃 | Details | 600 V | 340 W | - 40 C | + 100 C | 20 V | 底座安装 | 1 | 3.880136 oz | Bulk | 150 A | -40°C ~ 175°C (TJ) | Tube | - | 三双共源 | 340 W | Standard | 250 µA | 600 V | 1.9V @ 15V, 100A | 150 | 沟渠现场停车 | 无 | 6.1 nF @ 25 V | IGBT硅模块 | ||||||||||||||||||||||||||
APTGT200DH60G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SP6 | SP6 | 1.5 V | 290 A | 400 nA | APTGT200 | 微芯片技术 | 活跃 | Details | 600 V | 625 W | - 40 C | + 100 C | 20 V | 底座安装 | 1 | 3.880136 oz | Bulk | 290 A | -40°C ~ 175°C (TJ) | Tube | - | Dual | 625 W | Standard | 250 µA | 600 V | 1.9V @ 15V, 200A | 290 | 沟渠现场停车 | 无 | 12.3 nF @ 25 V | IGBT硅模块 | ||||||||||||||||||||||||||
APTGT150DH120G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SP6 | SP6 | 1.7 V | 220 A | 400 nA | APTGT150 | 微芯片技术 | 活跃 | Details | 1.2 kV | 690 W | - 40 C | + 100 C | 20 V | 底座安装 | 1 | 3.880136 oz | Bulk | 220 A | - | Tube | - | Dual | 690 W | Standard | 350 µA | 1200 V | 2.1V @ 15V, 150A | 220 | 沟渠现场停车 | 无 | 10.7 nF @ 25 V | IGBT硅模块 | ||||||||||||||||||||||||||
APTGT50H120T3G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SP3-32 | SP3 | 1.7 V | 75 A | 400 nA | 微芯片技术 | Details | 1.2 kV | 270 W | - 40 C | + 100 C | 20 V | 底座安装 | 1 | Bulk | 75 A | APTGT50 | 活跃 | -40°C ~ 150°C (TJ) | Tube | - | 全桥 | 270 | 270 W | Standard | 250 µA | 1200 V | 2.1V @ 15V, 50A | 75 | 沟渠现场停车 | 有 | 3.6 nF @ 25 V | IGBT硅模块 | ||||||||||||||||||||||||||
DDB6U134N16RRB80BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Infineon | Infineon Technologies | Infineon Technologies | 活跃 | Tray | 500 W | + 150 C | - 40 C | 15 | 底座安装 | DDB6U134N16RR_B80 SP005569270 | Tray | * | Discrete Semiconductor Modules | Single | 134 A | Discrete Semiconductor Modules | IGBT硅模块 | 1.35 V at 100 A | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||||||||||||||
VS-ENV020M120M | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | EMIPAK | Vishay | Vishay Semiconductors | Details | Vishay General Semiconductor - Diodes Division | Box | 活跃 | 1200 V | 87 W | N-Channel | + 150 C | 100 | 压装 | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | 1-Phase Bridge | 33 A | Discrete Semiconductor Modules | Diode Power Modules | 1.29 V | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||||||||||
FS3L400R10W3S7FB11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-EASY3B | 200 A | Details | Infineon Technologies | 1.23 V | - 40 C | + 125 C | PCB 安装 | 8 | FS3L400R10W3S7F_B11 SP005567323 | Tray | 120 A | FS3L400R10 | 活跃 | -40°C ~ 175°C (TJ) | Tray | EasyPACK™ | 三级逆变器 | 20 mW | Standard | 26 µA | 950 V | 1.48V @ 15V, 45A | 沟渠现场停车 | 有 | 12600 pF @ 25 V | IGBT硅模块 | |||||||||||||||||||||||||||||||
PSS75SA2FT | Mitsubishi Materials U.S.A | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1.8 V | 75 A | - | 1200 V | - | - 30 C | + 100 C | 螺钉安装 | 10 | PSS75SA2FT | Details | 6-Pack | IGBT硅模块 | |||||||||||||||||||||||||||||||||||||||||||||||
PSS25SA2FT | Mitsubishi Materials U.S.A | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1.5 V | 25 A | - | - 30 C | + 100 C | 螺钉安装 | 10 | Details | 1200 V | 103 W | 6-Pack | IGBT硅模块 | ||||||||||||||||||||||||||||||||||||||||||||||||
PSS15SA2FT | Mitsubishi Materials U.S.A | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1.5 V | 15 A | - | - 30 C | + 100 C | 螺钉安装 | 10 | Details | 1200 V | 86.9 W | 6-Pack | IGBT硅模块 | ||||||||||||||||||||||||||||||||||||||||||||||||
PSS05SA2FT | Mitsubishi Materials U.S.A | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1.4 V | 5 A | - | Details | + 100 C | 螺钉安装 | 10 | - 30 C | 44.6 W | 1200 V | 6-Pack | IGBT硅模块 | ||||||||||||||||||||||||||||||||||||||||||||||||
MSCGLQ200A65TG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 活跃 | 微芯片技术 | MSCGLQ | 1 | Microchip | 微芯片技术 | Details | Bulk | * | IGBTs | IGBT模块 | IGBT模块 |
FF900R17ME7B11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FS200R10W3S7B11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FS150R12N2T7BPSA2
Infineon Technologies
分类:Transistors - IGBTs - Modules
FS3L25R12W2H3PB11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
IXYN110N120C4
IXYS
分类:Transistors - IGBTs - Modules
FS13MR12W2M1HB70BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
F3L75R12W1H3BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH100B120H3Q0PG
onsemi
分类:Transistors - IGBTs - Modules
NXH40B120MNQ1SNG
onsemi
分类:Transistors - IGBTs - Modules
FP50R12N2T7BPSA2
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP75R12N2T7B11BPSA2
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP35R12N2T7BPSA2
Infineon Technologies
分类:Transistors - IGBTs - Modules
NFAQ0560R46T
ON Semiconductor
分类:Transistors - IGBTs - Modules
APTGT100TDU60PG
Microchip Technology
分类:Transistors - IGBTs - Modules
APTGT200DH60G
Microchip Technology
分类:Transistors - IGBTs - Modules
APTGT150DH120G
Microchip Technology
分类:Transistors - IGBTs - Modules
APTGT50H120T3G
Microchip Technology
分类:Transistors - IGBTs - Modules
DDB6U134N16RRB80BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
VS-ENV020M120M
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
FS3L400R10W3S7FB11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
PSS75SA2FT
Mitsubishi Materials U.S.A
分类:Transistors - IGBTs - Modules
PSS25SA2FT
Mitsubishi Materials U.S.A
分类:Transistors - IGBTs - Modules
PSS15SA2FT
Mitsubishi Materials U.S.A
分类:Transistors - IGBTs - Modules
PSS05SA2FT
Mitsubishi Materials U.S.A
分类:Transistors - IGBTs - Modules
MSCGLQ200A65TG
Microchip Technology
分类:Transistors - IGBTs - Modules
