NXH100B120H3Q0PG详情
onsemi NXH100B120H3Q0PG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
Module
供应商器件包装
22-PIM (55x32.5)
厂商
onsemi
Package
Tray
Product Status
活跃
Current-Collector (Ic) (Max)
61 A
Maximum Gate Emitter Voltage
±20V
Package Type
Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins
Maximum Collector Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.77V
Factory Pack QuantityFactory Pack Quantity
24
Manufacturer
onsemi
Brand
onsemi
系列
-
操作温度
-40°C ~ 150°C (TJ)
包装
Tray
子类别
Discrete Semiconductor Modules
配置
2 Independent
功率耗散
186W
功率 - 最大
186 W
输入
Standard
产品类别
Discrete Semiconductor Modules
最大集极截止电流
200 μA
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.3V @ 15V, 50A
连续集电极电流
61A
IGBT类型
沟渠现场停车
NTC热敏电阻
无
输入电容(Cies)@Vce
9.075 nF @ 20 V
产品类别
Discrete Semiconductor Modules
NXH100B120H3Q0PG拓展信息
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
onsemi








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