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70V3579S4BF8备选型号: 70V3389S4BF

70V3579S4BF8

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 4.2ns 208-Pin CABGA T/R

7 Weeks
表面贴装
208
RAM, SRAM
Tape & Reel
2008
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE
BOTTOM
BALL
225
1
3.3V
0.8mm
133MHz
20
208
3.3V
COMMERCIAL
Parallel
3.45V
3.15V
2
460mA
4.2 ns
3-STATE
30b
1.1 Mb
COMMON
Synchronous
36b
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
-
-
-
70V3389S4BF

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 3.3V 1.125M-Bit 64K x 18 4.2ns 208-Pin CABGA

7 Weeks
表面贴装
208
RAM, SDR, SRAM
-
2009
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE
BOTTOM
BALL
225
1
3.3V
0.8mm
133MHz
20
208
3.3V
COMMERCIAL
Parallel
3.45V
3.15V
2
460mA
4.2 ns
3-STATE
32b
1.1 Mb
COMMON
Synchronous
18b
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
128kB
64KX18
0.015A
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	70V3579S5BF8	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 5ns 208-Pin CABGA T/R	对比
	70V3389S4BF	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 1.125M-Bit 64K x 18 4.2ns 208-Pin CABGA	对比