登录 / 注册

产品

输入型号/关键词

70V3579S4BF8备选型号: CY7C09579V-100BBC

70V3579S4BF8

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 4.2ns 208-Pin CABGA T/R

7 Weeks
表面贴装
208
RAM, SRAM
460mA
Tape & Reel
2008
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE
3.3V
BOTTOM
BALL
225
1
0.8mm
133MHz
20
COMMERCIAL
Parallel
2
4.2 ns
3-STATE
30b
1.1 Mb
COMMON
Synchronous
36b
3.45V
3.15V
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
-
-
-
-
-
-
-
-
-
-
-
CY7C09579V-100BBC

Cypress Semiconductor Corp

IC SRAM 1.152MBIT 100MHZ 172FBGA

10 Weeks
表面贴装
172
Volatile
385mA
Tray
2000
e0
no
Obsolete
3 (168 Hours)
172
Tin/Lead (Sn/Pb)
-
-
FLOW-THROUGH OR PIPELINED ARCHITECTURE
3.3V
BOTTOM
-
220
1
1mm
-
-
-
-
2
5ns
3-STATE
30b
1.1 Mb
COMMON
Synchronous
36b
3.465V
3.135V
15mm
-
-
无
Non-RoHS Compliant
含铅
表面贴装
172-LFBGA
0°C~70°C TA
CY7C09579
1.152Mb 32K x 36
100MHz
SRAM
Parallel
36
0.001A
3.14V
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	CY7C09579V-100BBC	Cypress Semiconductor Corp	存储器	172-LFBGA	IC SRAM 1.152MBIT 100MHZ 172FBGA	对比
	70V3579S5BF8	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 5ns 208-Pin CABGA T/R	对比
	70V3389S4BF	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 1.125M-Bit 64K x 18 4.2ns 208-Pin CABGA	对比