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71016S20YG8备选型号: AS7C1026B-20JCN

71016S20YG8

Integrated Device Technology (IDT)

SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44-Pin SOJ T/R

12 Weeks
表面贴装
44
RAM, SDR, SRAM - Asynchronous
Tape & Reel
2004
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
J BEND
260
1
5V
44
5V
5V
COMMERCIAL
Parallel
5.5V
4.5V
128kB
1
170mA
20 ns
3-STATE
16b
1 Mb
COMMON
Asynchronous
16b
28.6mm
10.2mm
3.683mm
2.9mm
符合RoHS标准
无
无铅
-
-
-
-
-
-
-
-
AS7C1026B-20JCN

Alliance Memory, Inc.

SRAM 1M, 5V, 20ns FAST 64K x 16 Asynch SRAM

8 Weeks
-
44
Volatile
Tube
1996
-
-
活跃
3 (168 Hours)
-
-
70°C
0°C
-
-
-
-
-
-
5V
-
-
Parallel
5.5V
4.5V
1Mb 64K x 16
1
-
20ns
-
16b
1 Mb
-
-
-
-
-
-
-
ROHS3 Compliant
无
无铅
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44-SOJ
0°C~70°C TA
4.5V~5.5V
SRAM
Parallel
20ns
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