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71V65603S150BQI备选型号: IS64LF25636A-7.5B3LA3

71V65603S150BQI

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 165-Pin CABGA

12 Weeks
表面贴装
165
150MHz
345mA
2007
e0
no
活跃
3 (168 Hours)
165
Tin/Lead (Sn63Pb37)
85°C
-40°C
流水线结构
3.3V
BOTTOM
BALL
225
1
150MHz
20
INDUSTRIAL
Parallel
1.1MB
1
6.7 ns
256KX36
3-STATE
18b
9 Mb
0.06A
COMMON
Synchronous
36b
3.465V
3.135V
15mm
13mm
1.2mm
无
符合RoHS标准
含铅
-
-
-
-
-
-
-
-
-
-
-
IS64LF25636A-7.5B3LA3

ISSI, Integrated Silicon Solution Inc

SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns Automotive 165-Pin BGA

12 Weeks
-
165
Volatile
175mA
-
-
-
活跃
3 (168 Hours)
165
-
-
-
-
3.3V
BOTTOM
-
-
-
-
-
-
-
9Mb 256K x 36
4
7.5ns
256KX36
3-STATE
18b
9 Mb
0.09A
COMMON
Synchronous
36b
-
-
-
-
-
无
ROHS3 Compliant
-
表面贴装
165-TBGA
YES
-40°C~125°C TA
Tray
1mm
117MHz
SRAM
Parallel
36
AEC-Q100
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图片	产品型号	品牌	分类	封装	描述	对比
	IS64LF25636A-7.5B3LA3	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns Automotive 165-Pin BGA	对比
	71V65803S150BG	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 3.8ns 119-Pin BGA	对比
	71V67703S75BQ	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA	对比