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71V67603S150BGGI8备选型号: 71V65603S150BGG

71V67603S150BGGI8

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R

7 Weeks
BGA
YES
119
150MHz
2009
e1
yes
活跃
3 (168 Hours)
119
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
流水线结构
BOTTOM
BALL
260
1
3.3V
150MHz
30
119
3.3V
INDUSTRIAL
Parallel
3.465V
3.135V
1.1MB
1
325mA
3.8 ns
256KX36
3-STATE
18b
9 Mb
0.07A
COMMON
2.15mm
14mm
22mm
2.15mm
无
符合RoHS标准
无铅
-
-
-
-
-
71V65603S150BGG

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA

7 Weeks
BGA
-
119
RAM, SRAM
2007
e1
yes
活跃
3 (168 Hours)
119
Tin/Silver/Copper (Sn/Ag/Cu)
70°C
0°C
爆破计数器
BOTTOM
BALL
260
1
3.3V
150MHz
30
119
3.3V
COMMERCIAL
Parallel
3.465V
3.135V
-
1
-
3.8 ns
256KX36
3-STATE
18b
9 Mb
0.04A
COMMON
-
14mm
22mm
2.15mm
无
符合RoHS标准
无铅
表面贴装
325mA
Synchronous
36b
2.36mm
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	IS61NLP25636A-200B2LI	ISSI, Integrated Silicon Solution Inc	存储器	119-BBGA	SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 119-Pin BGA	对比
	71V65603S150BG8	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R	对比
	71V65603S150BGG8	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R	对比