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71V67603S150BGGI8备选型号: IS61NLP25636A-200B2LI

71V67603S150BGGI8

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R

7 Weeks
BGA
YES
119
150MHz
2009
e1
yes
活跃
3 (168 Hours)
119
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
流水线结构
BOTTOM
BALL
260
1
3.3V
150MHz
30
119
3.3V
INDUSTRIAL
Parallel
3.465V
3.135V
1.1MB
1
325mA
3.8 ns
256KX36
3-STATE
18b
9 Mb
0.07A
COMMON
2.15mm
14mm
22mm
2.15mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61NLP25636A-200B2LI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 119-Pin BGA

-
119-BBGA
YES
119
Volatile
-
e1
yes
活跃
3 (168 Hours)
119
Tin/Silver/Copper (Sn/Ag/Cu)
-
-
流水线结构
BOTTOM
-
260
1
3.3V
-
10
119
3.3V
-
-
-
-
9Mb 256K x 36
4
-
3.1ns
256KX36
3-STATE
18b
9 Mb
0.05A
COMMON
-
22mm
-
-
无
ROHS3 Compliant
无铅
表面贴装
-40°C~85°C TA
Tray
3A991.B.2.A
3.135V~3.465V
1.27mm
3.135V
280mA
200MHz
SRAM
Parallel
36
Synchronous
36b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS61NLP25636A-200B2LI	ISSI, Integrated Silicon Solution Inc	存储器	119-BBGA	SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 119-Pin BGA	对比
	71V65603S150BG8	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R	对比
	71V65603S150BGG8	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA T/R	对比