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AFT18P350-4S2LR6备选型号: PD57006S-E

AFT18P350-4S2LR6

NXP USA Inc.

FET RF 2CH 65V 1.81GHZ NI1230

10 Weeks
NI-1230-4LS2L
150°C
Tape & Reel (TR)
2006
活跃
不适用
EAR99
260
1.81GHz
40
Single
1A
N-CHANNEL
LDMOS (Dual)
16.1dB
63W
METAL-OXIDE SEMICONDUCTOR
28V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PD57006S-E

STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

-
PowerSO-10 Exposed Bottom Pad
1
Tube
-
Obsolete
3 (168 Hours)
EAR99
250
945MHz
30
-
70mA
N-CHANNEL
LDMOS
-
-
METAL-OXIDE SEMICONDUCTOR
28V
ROHS3 Compliant
表面贴装
4
e3
2
哑光锡
165°C
-65°C
20W
DUAL
FLAT
1A
PD57006
10
R-PDSO-F2
Single
增强型MOSFET
20W
SOURCE
AMPLIFIER
65V
1A
20V
6W
1A
65V
65V
15dB
无
无铅
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	PD57006S-E	STMicroelectronics	晶体管 - FET，MOSFET - 射频	PowerSO-10 Exposed Bottom Pad	FET RF 65V 945MHZ PWRSO-10	对比
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	PD57006-E	STMicroelectronics	晶体管 - FET，MOSFET - 射频	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	FET RF 65V 945MHZ PWRSO-10	对比