登录 / 注册

产品

输入型号/关键词

AS4C16M16D1-5BIN备选型号: IS43R16160F-5BLI

AS4C16M16D1-5BIN

Alliance Memory, Inc.

IC DRAM 256M PARALLEL 60TFBGA

8 Weeks
表面贴装
60-TFBGA
60-TFBGA (8x13)
Volatile
-40°C~85°C TA
Tray
2013
活跃
3 (168 Hours)
85°C
-40°C
2.3V~2.7V
200MHz
Parallel
256Mb 16M x 16
200MHz
700ps
DRAM
Parallel
15ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43R16160F-5BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA

8 Weeks
表面贴装
60-TFBGA
-
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
-
-
2.3V~2.7V
-
-
256Mb 16M x 16
200MHz
700ps
DRAM
Parallel
15ns
ROHS3 Compliant
YES
60
60
AUTO/SELF REFRESH
BOTTOM
未说明
1
2.5V
1mm
未说明
2.5V
2.7V
2.3V
1
SYNCHRONOUS
16MX16
16
13b
256 Mb
13mm
1.2mm
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-5BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS43R16160F-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA	对比