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AS4C16M32MD1-5BINTR备选型号: MT47H64M16NF-25E:M

AS4C16M32MD1-5BINTR

Alliance Memory, Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

8 Weeks
表面贴装
90-VFBGA
90
90-FBGA (8x13)
Volatile
-40°C~85°C TJ
Tape & Reel (TR)
2014
活跃
3 (168 Hours)
85°C
-40°C
1.7V~1.95V
200MHz
Parallel
512Mb 16M x 32
200MHz
5ns
DRAM
Parallel
15ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT47H64M16NF-25E:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 84FBGA

16 Weeks
表面贴装
84-TFBGA
84
-
Volatile
0°C~85°C TC
Tray
2013
活跃
3 (168 Hours)
-
-
1.8V
-
-
1Gb 64M x 16
400MHz
400ps
DRAM
Parallel
15ns
ROHS3 Compliant
Copper, Silver, Tin
表面贴装
e1
yes
84
EAR99
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
自我更新
8542.32.00.32
BOTTOM
260
1
0.8mm
30
MT47H64M16
1
16b
64MX16
3-STATE
16
16b
1 Gb
COMMON
1.9V
1.7V
8192
48
48
1.2mm
12.5mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	MT47H64M16NF-25E:M	Micron Technology Inc.	存储器	84-TFBGA	IC DRAM 1G PARALLEL 84FBGA	对比
	MT41K256M8DA-125:K	Micron Technology Inc.	存储器	78-TFBGA	IC DRAM 2G PARALLEL 78FBGA	对比